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| STP8NM60 - STP8NM60FP STB8NM60 - STD5NM60 - STD5NM60-1 N-CHANNEL 650V@Tjmax-0.9-8A TO-220/FP/D/IPAK/DPAK STripFETTM II MOSFET Table 1: General Features TYPE STP8NM60 STP8NM60FP STD5NM60 STD5NM60-1 STB8NM60 s s s s Figure 1: Package ID 8A 8 A(*) 5A 5A 5A Pw 100 W 30 W 96 W 96 W 96 W 1 1 1 1 1 VDSS 650 V 650 V 650 V 650 V 650 V RDS(on) < < < < < 3 1 2 s TYPICAL RDS(on) = 0.9 HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE TO-220 3 1 TO-220FP DPAK 3 1 1 3 2 DPAK DESCRIPTION The MDmeshTM is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company's PowerMESHTM horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar completition's products. IPAK Figure 2: Internal Schematic Diagram APPLICATIONS The MDmeshTM family is very suitable for increase the power density of high voltage converters allowing system miniaturization and higher efficiencies. Table 2: Order Codes Sales Type STP8NM60 STP8NM60FP STD5NM60 STD5NM60-1 STB8NM60 Marking P8NM60 P8NM60FP D5NM60 D5NM60 B8NM60 Package TO-220 TO-220FP DPAK IPAK DPAK Packaging TUBE TUBE TAPE & REEL TUBE TAPE & REEL Rev. 2 April 2005 1/16 STP8NM60 - STP8NM60FP - STD5NM60 - STD5NM60-1- STB8NM60 Table 3: Absolute Maximum ratings Symbol VGS ID ID IDM ( ) PTOT dv/dt (1) VISO Tj Tstg Parameter TO-220/DPAK Value TO-220FP DPAK/IPAK Unit V 5 3.1 20 96 0.4 15 A A A W W/C V/ns V C Gate- source Voltage Drain Current (continuous) at TC = 25C Drain Current (continuous) at TC = 100C Drain Current (pulsed) Total Dissipation at TC = 25C Derating Factor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Operating Junction Temperature Storage Temperature 8 5 32 100 0.8 15 - 30 8 (*) 5 (*) 32 (*) 30 0.24 15 2500 -55 to 150 ( ) Pulse width limited by safe operating area (1) ISD 5A, di/dt 400A/s, VDD V(BR)DSS, Tj TJMAX. (*) Limited only by maximum temperature allowed Table 4: Thermal Data TO-220/DPAK TO-220FP 4.16 62.5 300 DPAK/IPAK Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose 1.25 1.3 C/W C/W C Table 5: Avalanche Characteristics Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 C, ID = IAR, VDD = 50 V) Max Value 2.5 200 Unit A mJ ELECTRICAL CHARACTERISTICS (TCASE =25C UNLESS OTHERWISE SPECIFIED) Table 6: On/Off Symbol V(BR)DSS IDSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Test Conditions ID = 250 A, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 C Min. 600 Typ. Max. Unit V 1 10 100 A A nA IGSS VGS(th) RDS(on) Gate-body Leakage VGS = 30V Current (VDS = 0) Gate Threshold Voltage Static Drain-source On Resistance VDS = VGS, ID = 250A VGS = 10V, ID = 2.5 A 3 4 0.9 5 1 V 2/16 STP8NM60 - STP8NM60FP - STD5NM60 - STD5NM60-1 - STB8NM60 - STB8NM60 ELECTRICAL CHARACTERISTICS (CONTINUED) Table 7: Dynamic Symbol gfs Ciss Coss Crss Coss eq. (2) td(on) tr Qg Qgs Qgd Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Equivalent Output Capacitance Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDS = ID(on) x RDS(on)max, ID = 2.5A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. 2.4 440 100 10 50 14 10 13 5 6 18 Max. Unit S pF pF pF pF ns ns nC nC nC VGS = 0V, VDS = 0V to 480V VDD = 300 V, ID = 2.5 A RG = 4.7 VGS = 10 V (Resistive Load see, Figure 3) VDD = 400V, ID = 5 A, VGS = 10V Table 8: Switching On/Off Symbol td(off) tf tr(Voff) tf tc Parameter Turn-off Delay Time Fall Time Off-voltage Rise Time Fall Time Cross-over Time Test Conditions VDD = 300 V, ID = 2.5 A RG = 4.7 VGS = 10 V (Resistive Load see, Figure 3) VDD = 480V, ID = 5 A, RG = 4.7, VGS = 10V (Inductive Load see, Figure 5) Min. Typ. 23 10 7 10 17 Max. Unit ns ns ns ns ns Table 9: Source Drain Diode Symbol ISD ISDM ( ) VSD (2) trr Qrr IRRM trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 5 A, VGS = 0 ISD = 5 A, di/dt = 100A/s VDD = 100 V, Tj = 25C (see test circuit, Figure 5) ISD = 5 A, di/dt = 100A/s VDD = 100 V, Tj = 150C (see test circuit, Figure 5) 300 1950 13 445 3005 13.5 Test Conditions Min. Typ. Max. 8 32 1.5 Unit A A V ns C A ns C A (2) Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. 3/16 STP8NM60 - STP8NM60FP - STD5NM60 - STD5NM60-1- STB8NM60 Figure 3: Safe Operating Area for TO-220/ DPAK Figure 6: Thermal Impedance for TO-220/ DPAK Figure 4: Safe Operating Area for TO-220FP Figure 7: Thermal Impedance for TO-220FP Figure 5: Safe Operating Area for DPAK/IPAK Figure 8: Thermal Impedance for DPAK/IPAK 4/16 STP8NM60 - STP8NM60FP - STD5NM60 - STD5NM60-1 - STB8NM60 - STB8NM60 Figure 9: Output Characteristics Figure 12: Transfer Characteristics Figure 10: Transconductance Figure 13: Static Drain-Source on Resistance Figure 11: Gate Charge vs Gate source Voltage Figure 14: Capacitance Variations 5/16 STP8NM60 - STP8NM60FP - STD5NM60 - STD5NM60-1- STB8NM60 Figure 15: Normalized Gate Thereshold Voltage vs Temperature j Figure 17: Normalized on Resistance vs Temperature Figure 16: Source Drain Diode Forward Characteristics 6/16 STP8NM60 - STP8NM60FP - STD5NM60 - STD5NM60-1 - STB8NM60 - STB8NM60 Figure 18: Unclamped Inductive Load Test Circuit Figure 21: Unclamped Inductive Wafeform Figure 19: Switching Times Test Circuit For Resistive Load Figure 22: Gate Charge Test Circuit Figure 20: Test Circuit For Inductive Load Switching and Diode Recovery Times 7/16 STP8NM60 - STP8NM60FP - STD5NM60 - STD5NM60-1- STB8NM60 TO-220 MECHANICAL DATA DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154 oP Q 8/16 STP8NM60 - STP8NM60FP - STD5NM60 - STD5NM60-1 - STB8NM60 - STB8NM60 TO-220FP MECHANICAL DATA mm. MIN. 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 28.6 9.8 2.9 15.9 9 3 30.6 10.6 3.6 16.4 9.3 3.2 1.126 .0385 0.114 0.626 0.354 0.118 TYP MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.141 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 DIM. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 O A B L3 L6 L7 F1 D F G1 H F2 L2 L5 E 123 L4 G 9/16 STP8NM60 - STP8NM60FP - STD5NM60 - STD5NM60-1- STB8NM60 TO-251 (IPAK) MECHANICAL DATA DIM. MIN. A A1 A3 B B2 B3 B5 B6 C C2 D E G H L L1 L2 0.45 0.48 6 6.4 4.4 15.9 9 0.8 0.8 0.3 0.95 0.6 0.6 6.2 6.6 4.6 16.3 9.4 1.2 1 0.017 0.019 0.236 0.252 0.173 0.626 0.354 0.031 0.031 2.2 0.9 0.7 0.64 5.2 mm TYP. MAX. 2.4 1.1 1.3 0.9 5.4 0.85 0.012 0.037 0.023 0.023 0.244 0.260 0.181 0.641 0.370 0.047 0.039 MIN. 0.086 0.035 0.027 0.025 0.204 inch TYP. MAX. 0.094 0.043 0.051 0.031 0.212 0.033 H A C C2 L2 D B3 B6 A1 L = = 3 B5 B A3 = B2 = G = E L1 1 2 = 0068771-E 10/16 STP8NM60 - STP8NM60FP - STD5NM60 - STD5NM60-1 - STB8NM60 - STB8NM60 TO-252 (DPAK) MECHANICAL DATA mm MIN. A A1 A2 B B2 C C2 D E G H L2 L4 V2 0.60 0 o DIM. 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 6.40 4.40 9.35 inch MAX. 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20 6.60 4.60 10.10 MIN. 0.087 0.035 0.001 0.025 0.204 0.018 0.019 0.236 0.252 0.173 0.368 0.031 1.00 8 o TYP. TYP. MAX. 0.094 0.043 0.009 0.035 0.213 0.024 0.024 0.244 0.260 0.181 0.398 0.8 0.024 0 o 0.039 0o P032P_B 11/16 STP8NM60 - STP8NM60FP - STD5NM60 - STD5NM60-1- STB8NM60 DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 16.4 50 22.4 18.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0.795 0.645 0.724 1.968 0.881 BULK QTY 2500 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 B1 D D1 E F K0 P0 P1 P2 R W BASE QTY 2500 mm MIN. 6.8 10.4 1.5 1.5 1.65 7.4 2.55 3.9 7.9 1.9 40 15.7 16.3 inch MIN. MAX. 7 0.267 0.275 0.409 0.417 0.476 0.059 0.063 0.059 0.065 0.073 0.291 0.299 0.100 0.108 0.153 0.161 0.311 0.319 0.075 0.082 1.574 0.618 0.641 MAX. 10.6 12.1 1.6 1.85 7.6 2.75 4.1 8.1 2.1 12/16 STP8NM60 - STP8NM60FP - STD5NM60 - STD5NM60-1 - STB8NM60 - STB8NM60 D2PAK MECHANICAL DATA TO-247 MECHANICAL DATA mm. DIM. MIN. A A1 A2 B B2 C C2 D D1 E E1 G L L2 L3 M R V2 0 4.88 15 1.27 1.4 2.4 0.4 4 10 8.5 5.28 15.85 1.4 1.75 3.2 0.192 0.590 0.050 0.055 0.094 0.015 4.4 2.49 0.03 0.7 1.14 0.45 1.23 8.95 8 10.4 0.393 0.334 0.208 0.625 0.055 0.068 0.126 TYP MAX. 4.6 2.69 0.23 0.93 1.7 0.6 1.36 9.35 MIN. 0.173 0.098 0.001 0.027 0.044 0.017 0.048 0.352 0.315 TYP. MAX. 0.181 0.106 0.009 0.036 0.067 0.023 0.053 0.368 inch 3 1 13/16 STP8NM60 - STP8NM60FP - STD5NM60 - STD5NM60-1- STB8NM60 D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 24.4 100 30.4 26.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0795 0.960 1.039 3.937 1.197 BULK QTY 1000 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 D D1 E F K0 P0 P1 P2 R T W mm MIN. 10.5 15.7 1.5 1.59 1.65 11.4 4.8 3.9 11.9 1.9 50 0.25 23.7 24.3 MAX. 10.7 15.9 1.6 1.61 1.85 11.6 5.0 4.1 12.1 2.1 inch MIN. MAX. 0.413 0.421 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1.574 0.35 0.0098 0.0137 0.933 0.956 BASE QTY 1000 * on sales type 14/16 STP8NM60 - STP8NM60FP - STD5NM60 - STD5NM60-1 - STB8NM60 - STB8NM60 Table 10: Revision History Date 11-Apr-2005 Revision 2 Inserted DPAK. Description of Changes 15/16 STP8NM60 - STP8NM60FP - STD5NM60 - STD5NM60-1- STB8NM60 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners (c) 2005 STMicroelectronics - All Rights Reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 16/16 |
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